Ingredients for enhanced thermoelectric power at cryo-temperatures in the correlated CoSbS semiconductor revealed by its optical response

We address the optical response of the novel thermoelectric material CoSbS at low temperatures. The semiconducting CoSbS is well known for its thermoelectric performance at high temperatures but it also attracts great interest because of its colossal low-temperature thermopower. It provides an arena for the study of the additional interplay between electronic correlations, which cannot be neglected at cryogenic temperatures, and the thermopower factor as well as the thermal conductivity.

Enlarged view: Graph showing the enlargement of σ1(ω) at energies where the sharp absorption onset at about 5000 cm-1 takes place for three selected T
Fig. 1.18: Enlargement of σ1(ω) at energies where the sharp absorption onset at about 5000 cm-1 takes place for three selected T. The intercept of the linear extrapolation (thick dashed lines) of its leading edge with the energy axis defines Eg. The inset shows its T dependence. The four harmonic oscillators (HO), describing the gap edge, are shown at 10 and 300 K, thus highlighting the spectral weight reshuffling between and the lineshape narrowing of the Lorentz HOs (L1 to L4). Reddish and bluish colors refer to 300 and 10 K, respectively. The dotted lines are the total fits at 10 and 300 K, while the grey dash-dot line is the T-independent contribution given by the additional HOs at high frequencies.

Our work presents measurements of the optical reflectivity of CoSbS, collected from the far-infrared to the ultraviolet at nearly normal incidence as a function of temperature. This is the prerequisite in order to perform reliable Kramers-Kronig transformation of the measured quantity, giving access to all optical functions (Fig. 1.18). High-resolution scanning transmission electron microscopy investigations complement our experimental study.

The optical properties of CoSbS at low T signal the important role of coherent phonons and heavy carriers, both being an asset for the enhancement of the thermopower. This mixture of ingredients from lattice dynamics and electronic band structure turns out to be essential in order to enhance the thermopower at cryo-temperatures. The binding aspect for such a mixture in the correlated CoSbS semiconductor is given by the presence of in-gap impurity states, originating from interstitial Sb, which seem to play quite a decisive role (Fig. 1.19). Our data therefore proposes the selective tuning of impurity states as an affordable strategy towards the enhancement of the thermoelectric power.

Enlarged view: Fig. 1.19
Fig. 1.19: (a) Proposal for the density-of-states (DOS) evolution when crossing 200 K, with the relevant excitations (arrows) either across Eg or involving the impurity states. The same color code as in panel (b) allows relating the excitations to their spectral weight (SW) evolution. The thickness of the arrows indeed mimics the T dependence of their relative SW changes (increasing with thickness). (b) T dependence of (total) SW, normalised at 300 K, encountered in selected components of the Lorentz phenomenological fit: electronic background at FIR energy scales, HOs L1 and L2 as well as L3 and L4 (Fig. 1.18).
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